Interelectronic collisions and electron-optical phonon interactions in polar semiconductors: A criterion for the electron temperature model

J. P. Leburton; K. Hess

doi:10.1016/0375-9601(83)90900-3

Interelectronic collisions and electron-optical phonon interactions in polar semiconductors: A criterion for the electron temperature model

J. P. Leburton, K. Hess

Electrical and Computer Engineering

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Abstract

In this letter a new criterion for the electron temperature model in polar semiconductors is proposed. This criterion accounts for the low energy e-e interaction which replenishes the depletion of electrons caused by intense optical phonon emission above the phonon energy h {combining short stroke overlay}ω. It shows that a maxwellian distribution can hardly be achieved at all in the presence of polar optical phonon scattering and non-equilibrium conditions.

Original language	English (US)
Pages (from-to)	335-338
Number of pages	4
Journal	Physics Letters A
Volume	99
Issue number	6-7
DOIs	https://doi.org/10.1016/0375-9601(83)90900-3
State	Published - Dec 12 1983

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General Physics and Astronomy

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title = "Interelectronic collisions and electron-optical phonon interactions in polar semiconductors: A criterion for the electron temperature model",

abstract = "In this letter a new criterion for the electron temperature model in polar semiconductors is proposed. This criterion accounts for the low energy e-e interaction which replenishes the depletion of electrons caused by intense optical phonon emission above the phonon energy h {combining short stroke overlay}ω. It shows that a maxwellian distribution can hardly be achieved at all in the presence of polar optical phonon scattering and non-equilibrium conditions.",

author = "Leburton, {J. P.} and K. Hess",

note = "Funding Information: This work was supported by the Office of Naval Research and the Joint Services Electromcs Program.",

year = "1983",

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doi = "10.1016/0375-9601(83)90900-3",

language = "English (US)",

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pages = "335--338",

journal = "Physics Letters A",

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TY - JOUR

T1 - Interelectronic collisions and electron-optical phonon interactions in polar semiconductors

T2 - A criterion for the electron temperature model

AU - Leburton, J. P.

AU - Hess, K.

N1 - Funding Information: This work was supported by the Office of Naval Research and the Joint Services Electromcs Program.

PY - 1983/12/12

Y1 - 1983/12/12

N2 - In this letter a new criterion for the electron temperature model in polar semiconductors is proposed. This criterion accounts for the low energy e-e interaction which replenishes the depletion of electrons caused by intense optical phonon emission above the phonon energy h {combining short stroke overlay}ω. It shows that a maxwellian distribution can hardly be achieved at all in the presence of polar optical phonon scattering and non-equilibrium conditions.

AB - In this letter a new criterion for the electron temperature model in polar semiconductors is proposed. This criterion accounts for the low energy e-e interaction which replenishes the depletion of electrons caused by intense optical phonon emission above the phonon energy h {combining short stroke overlay}ω. It shows that a maxwellian distribution can hardly be achieved at all in the presence of polar optical phonon scattering and non-equilibrium conditions.

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JO - Physics Letters A

JF - Physics Letters A

IS - 6-7

ER -

Interelectronic collisions and electron-optical phonon interactions in polar semiconductors: A criterion for the electron temperature model

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