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Interedge tunneling in quantum Hall line junctions
Eun Ah Kim,
Eduardo Fradkin
Physics
Materials Research Lab
Center for Advanced Study
Center for Latin American and Caribbean Studies
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peer-review
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Keyphrases
Tunneling
100%
Zero Bias
100%
Quantum Hall
100%
Line Junction
100%
Fill Factor
33%
Zero Temperature
16%
Energy Scaling
16%
Point Contact
16%
Tunneling Conductance
16%
Coulomb Interaction
16%
Laterally Coupled
16%
Luttinger Liquid
16%
Spin-dependent Tunneling
16%
Bias Voltage
16%
Finite Width
16%
K Parameter
16%
Differential Conductance
16%
Low Height
16%
Luttinger Parameters
16%
Engineering
Tunnel Construction
100%
Junction Line
100%
Contact Point
20%
Conductance Peak
20%
Coulomb Interaction
20%
Bias Voltage
20%
Deep System
20%