Interconnect thermal modeling for determining design limits on current density

Danqing Chen, Erhong Li, Elyse Rosenbaum, Sung Mo Kang

Research output: Contribution to conferencePaper

Abstract

We apply 3-D finite element analysis to study the thermal coupling between nearby interconnects. We find that the temperature rise in current-carrying lines is significantly influenced by a dense array of lines in the adjacent metal level. In contrast, thermal coupling between just two neighboring lines is insignificant for most geometries. Design rules for average current density are provided for specific geometries given the requirement that the interconnect temperature be no more than 5 °C above the substrate temperature. Semi-empirical formulae for coupling effects are presented based on the numerical results.

Original languageEnglish (US)
Pages172-178
Number of pages7
StatePublished - Jan 1 1999
EventProceedings of the 1999 International Symposium on Physical Design, ISPD-99 - Monterey, CA, USA
Duration: Apr 12 1999Apr 14 1999

Conference

ConferenceProceedings of the 1999 International Symposium on Physical Design, ISPD-99
CityMonterey, CA, USA
Period4/12/994/14/99

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Chen, D., Li, E., Rosenbaum, E., & Kang, S. M. (1999). Interconnect thermal modeling for determining design limits on current density. 172-178. Paper presented at Proceedings of the 1999 International Symposium on Physical Design, ISPD-99, Monterey, CA, USA, .