Interconnect thermal modeling for accurate simulation of circuit timing and reliability

Danqing Chen, Erhong Li, Elyse Rosenbaum, Sung Mo Kang

Research output: Contribution to journalArticle

Abstract

We apply three-dimensional finite element analysis to study the thermal coupling between nearby interconnects. We find that the temperature rise in current-carrying lines is significantly influenced by a dense array of lines in a nearby metal level. In contrast, thermal coupling between just two neighboring parallel lines is insignificant for most geometries. Design rules for average root-mean-square current density are provided for specific geometries given the requirement that the interconnect temperature be no more than 5°C above the substrate temperature. Semi-empirical formulae for coupling effects are presented based on the numerical results. A procedure is proposed to implement the formulae in computer-aided design tools.

Original languageEnglish (US)
Pages (from-to)197-205
Number of pages9
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume19
Issue number2
DOIs
StatePublished - Jan 1 2000

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Timing circuits
Geometry
Temperature
Computer aided design
Current density
Finite element method
Substrates
Metals
Hot Temperature

ASJC Scopus subject areas

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

Cite this

Interconnect thermal modeling for accurate simulation of circuit timing and reliability. / Chen, Danqing; Li, Erhong; Rosenbaum, Elyse; Kang, Sung Mo.

In: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 19, No. 2, 01.01.2000, p. 197-205.

Research output: Contribution to journalArticle

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