We apply three-dimensional finite element analysis to study the thermal coupling between nearby interconnects. We find that the temperature rise in current-carrying lines is significantly influenced by a dense array of lines in a nearby metal level. In contrast, thermal coupling between just two neighboring parallel lines is insignificant for most geometries. Design rules for average root-mean-square current density are provided for specific geometries given the requirement that the interconnect temperature be no more than 5°C above the substrate temperature. Semi-empirical formulae for coupling effects are presented based on the numerical results. A procedure is proposed to implement the formulae in computer-aided design tools.
|Original language||English (US)|
|Number of pages||9|
|Journal||IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems|
|State||Published - Jan 1 2000|
ASJC Scopus subject areas
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering