Interconnect-driven nanoelectronic circuits

Sansiri Haruehanroengra, D. Chen, Wei Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The future of the hundred billion dollar semiconductor industry relies on novel nanoelectronic devices and circuits as well as new design approaches. In this paper, a novel interconnect-driven design method is proposed to build practical nanoelectronic circuits using nickel silicide (NiSi) nanowires. This interconnect-driven approach is to design nanoelectronic circuits by selecting efficient interconnect solution first, and then determining the appropriate logic style and material for the circuit based on the interconnect. By focusing on the interconnect bottleneck, rather than devices per se, this proposed solution would significantly improve the feasibility and overall performance of the nanoelectronic circuit. The interconnect-driven approach and NiSi nanowire are a perfect match. Using the interconnect-driven approach, NiSi nanowire and NiSi/Si transistors can form efficient interconnects, pseudo logics and hybrid circuits. This complete interconnect/circuit solution can be achieved by integrating both active devices and high-performance interconnects in a single NiSi nanowire building block.

Original languageEnglish (US)
Title of host publicationProceedings of the 2006 49th Midwest Symposium on Circuits and Systems, MWSCAS'06
Number of pages5
StatePublished - 2006
Externally publishedYes
Event2006 49th Midwest Symposium on Circuits and Systems, MWSCAS'06 - San Juan, Puerto Rico
Duration: Aug 6 2006Aug 9 2007

Publication series

NameMidwest Symposium on Circuits and Systems
ISSN (Print)1548-3746


Other2006 49th Midwest Symposium on Circuits and Systems, MWSCAS'06
Country/TerritoryPuerto Rico
CitySan Juan

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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