Integration of nanophotonic devices for on-chip optical interconnects

Solomon Assefa, Fengnian Xia, S. W. Bedell, Ying Zhang, Teya Topuria, Philip M. Rice, Yurii A. Vlasov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Compact germanium waveguide photodetector with 40Gbps bandwidth and 0.4A/W responsivity is demonstrated. High-quality Ge-on-insulator single-crystalline layer was monolithically integrated into front-end CMOS process by lateral seeded crystallization.

Original languageEnglish (US)
Title of host publication2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs
StatePublished - Nov 10 2009
Externally publishedYes
Event2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China
Duration: Jul 13 2009Jul 17 2009

Publication series

Name2009 14th OptoElectronics and Communications Conference, OECC 2009

Other

Other2009 14th OptoElectronics and Communications Conference, OECC 2009
CountryChina
CityHong Kong
Period7/13/097/17/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

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  • Cite this

    Assefa, S., Xia, F., Bedell, S. W., Zhang, Y., Topuria, T., Rice, P. M., & Vlasov, Y. A. (2009). Integration of nanophotonic devices for on-chip optical interconnects. In 2009 14th OptoElectronics and Communications Conference, OECC 2009 [5214256] (2009 14th OptoElectronics and Communications Conference, OECC 2009). https://doi.org/10.1109/OECC.2009.5214256