Integration of InAlAs/InGaAs/InP enhancement-and depletion-mode high electron mobility transistors for high-speed circuit applications

A. Mahajan; P. Fay; M. Arafa; I. Adesida

doi:10.1109/16.658854

Integration of InAlAs/InGaAs/InP enhancement-and depletion-mode high electron mobility transistors for high-speed circuit applications

A. Mahajan, P. Fay, M. Arafa, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

A process for the monolithic integration of enhancement-and depletion-mode high electron mobility transistors (E/D-HEMT's) on InAlAs/InGaAs/InP is reported. The E-HEMT's with a 1.0-μm gate length exhibit a threshold voltage of +255 mV and a maximum dc extrinsic transconductance of 503 mS/mni at room temperature, while a threshold voltage of -317 mV and a transconductance of 390 mS/mni are measured for the D-HEMT's of the same gate length. The devices show excellent RF performance, with a unity current-gain cutoff frequency (f_t) of 35 GHz and a maximum frequency of oscillation (f_max) of 95 GHz for both the E- and D-HEMT's. To the best of the authors' knowledge, this is the first demonstration of an E/D-HEMT technology on lattice-matched InP that is suitable for circuit integration.

Original language	English (US)
Pages (from-to)	338-340
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	45
Issue number	1
DOIs	https://doi.org/10.1109/16.658854
State	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.658854

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abstract = "A process for the monolithic integration of enhancement-and depletion-mode high electron mobility transistors (E/D-HEMT's) on InAlAs/InGaAs/InP is reported. The E-HEMT's with a 1.0-μm gate length exhibit a threshold voltage of +255 mV and a maximum dc extrinsic transconductance of 503 mS/mni at room temperature, while a threshold voltage of -317 mV and a transconductance of 390 mS/mni are measured for the D-HEMT's of the same gate length. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 35 GHz and a maximum frequency of oscillation (fmax) of 95 GHz for both the E- and D-HEMT's. To the best of the authors' knowledge, this is the first demonstration of an E/D-HEMT technology on lattice-matched InP that is suitable for circuit integration.",

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AU - Fay, P.

AU - Arafa, M.

AU - Adesida, I.

PY - 1998

Y1 - 1998

N2 - A process for the monolithic integration of enhancement-and depletion-mode high electron mobility transistors (E/D-HEMT's) on InAlAs/InGaAs/InP is reported. The E-HEMT's with a 1.0-μm gate length exhibit a threshold voltage of +255 mV and a maximum dc extrinsic transconductance of 503 mS/mni at room temperature, while a threshold voltage of -317 mV and a transconductance of 390 mS/mni are measured for the D-HEMT's of the same gate length. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 35 GHz and a maximum frequency of oscillation (fmax) of 95 GHz for both the E- and D-HEMT's. To the best of the authors' knowledge, this is the first demonstration of an E/D-HEMT technology on lattice-matched InP that is suitable for circuit integration.

AB - A process for the monolithic integration of enhancement-and depletion-mode high electron mobility transistors (E/D-HEMT's) on InAlAs/InGaAs/InP is reported. The E-HEMT's with a 1.0-μm gate length exhibit a threshold voltage of +255 mV and a maximum dc extrinsic transconductance of 503 mS/mni at room temperature, while a threshold voltage of -317 mV and a transconductance of 390 mS/mni are measured for the D-HEMT's of the same gate length. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 35 GHz and a maximum frequency of oscillation (fmax) of 95 GHz for both the E- and D-HEMT's. To the best of the authors' knowledge, this is the first demonstration of an E/D-HEMT technology on lattice-matched InP that is suitable for circuit integration.

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Integration of InAlAs/InGaAs/InP enhancement-and depletion-mode high electron mobility transistors for high-speed circuit applications

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