A process for the monolithic integration of enhancement-and depletion-mode high electron mobility transistors (E/D-HEMT's) on InAlAs/InGaAs/InP is reported. The E-HEMT's with a 1.0-μm gate length exhibit a threshold voltage of +255 mV and a maximum dc extrinsic transconductance of 503 mS/mni at room temperature, while a threshold voltage of -317 mV and a transconductance of 390 mS/mni are measured for the D-HEMT's of the same gate length. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 35 GHz and a maximum frequency of oscillation (fmax) of 95 GHz for both the E- and D-HEMT's. To the best of the authors' knowledge, this is the first demonstration of an E/D-HEMT technology on lattice-matched InP that is suitable for circuit integration.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering