Integration of Germanium avalanche photodetectors on silicon for on-chip optical interconnects

Solomon Assefa, Fengnian Xia, Yurii A. Vlasov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A waveguide-integrated Germanium avalanche photodetector with gain-bandwidth-product of 350GHz, sensitivity improvement of 6dB, and excess noise with keff ∼ 0.2 was demonstrated while operating with 12dB gain at around 3V bias voltage. The photodetector has capacitance of 10±2fF and operates at 40Gbps. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal.

Original languageEnglish (US)
Title of host publicationSiGe, Ge, and Related Compounds 4
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages749-756
Number of pages8
Edition6
ISBN (Electronic)9781607681755
ISBN (Print)9781566778251
DOIs
StatePublished - 2010
Externally publishedYes

Publication series

NameECS Transactions
Number6
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • General Engineering

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