@inproceedings{34fb252caee14d2da138ce8557928e6e,
title = "Integration of Germanium avalanche photodetectors on silicon for on-chip optical interconnects",
abstract = "A waveguide-integrated Germanium avalanche photodetector with gain-bandwidth-product of 350GHz, sensitivity improvement of 6dB, and excess noise with keff ∼ 0.2 was demonstrated while operating with 12dB gain at around 3V bias voltage. The photodetector has capacitance of 10±2fF and operates at 40Gbps. Monolithic integration of thin single-crystalline Ge into front-end CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal.",
author = "Solomon Assefa and Fengnian Xia and Vlasov, {Yurii A.}",
year = "2010",
doi = "10.1149/1.3487605",
language = "English (US)",
isbn = "9781566778251",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "749--756",
booktitle = "SiGe, Ge, and Related Compounds 4",
edition = "6",
}