A particle-particle-particle-mesh (P3M) algorithm is integrated with the ensemble Monte Carlo (EMC) method for the treatment of carrier-impurity (c-i) and carrier-carrier (c-c) effects in semiconductor device simulation. Ionized impurities and charge carriers are treated granularly as opposed to the normal continuum methods and c-i and c-c interactions are calculated in three dimensions. The combined P3M-EMC method follows the approach of Hockney, but is modified to treat nonuniform rectilinear meshes with arbitrary boundary conditions. Bulk mobility results are obtained for a three-dimensional (3-D) resistor and are compared with previously reported experimental and numerical results.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering