Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices

Carl J. Wordelman, Umberto Ravaioli

Research output: Contribution to journalArticlepeer-review

Abstract

A particle-particle-particle-mesh (P3M) algorithm is integrated with the ensemble Monte Carlo (EMC) method for the treatment of carrier-impurity (c-i) and carrier-carrier (c-c) effects in semiconductor device simulation. Ionized impurities and charge carriers are treated granularly as opposed to the normal continuum methods and c-i and c-c interactions are calculated in three dimensions. The combined P3M-EMC method follows the approach of Hockney, but is modified to treat nonuniform rectilinear meshes with arbitrary boundary conditions. Bulk mobility results are obtained for a three-dimensional (3-D) resistor and are compared with previously reported experimental and numerical results.

Original languageEnglish (US)
Pages (from-to)410-416
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume47
Issue number2
DOIs
StatePublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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