InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35 × 12 μm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100kA/cm2. This work demonstrates clear progress toward a THz transistor.
ASJC Scopus subject areas
- Electrical and Electronic Engineering