InP/InGaAs SHBTs with 75 nm collector and ft> 500 GHz

W. Hafez; Jie Wei Lai; M. Feng

doi:10.1049/el:20030951

InP/InGaAs SHBTs with 75 nm collector and f_t> 500 GHz

W. Hafez, Jie Wei Lai, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, f_T of 509 GHz. The 0.35 × 12 μm² devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BV_CEO of 2.7 V, and operate at current densities above 1100kA/cm². This work demonstrates clear progress toward a THz transistor.

Original language	English (US)
Pages (from-to)	1475-1476
Number of pages	2
Journal	Electronics Letters
Volume	39
Issue number	20
DOIs	https://doi.org/10.1049/el:20030951
State	Published - Oct 2 2003

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:20030951

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Cite this

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title = "InP/InGaAs SHBTs with 75 nm collector and ft> 500 GHz",

abstract = "InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35 × 12 μm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100kA/cm2. This work demonstrates clear progress toward a THz transistor.",

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N2 - InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35 × 12 μm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100kA/cm2. This work demonstrates clear progress toward a THz transistor.

AB - InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35 × 12 μm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100kA/cm2. This work demonstrates clear progress toward a THz transistor.

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