InP/InGaAs SHBTs with 75 nm collector and ft> 500 GHz

W. Hafez, Jie Wei Lai, M. Feng

Research output: Contribution to journalArticlepeer-review

Abstract

InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35 × 12 μm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100kA/cm2. This work demonstrates clear progress toward a THz transistor.

Original languageEnglish (US)
Pages (from-to)1475-1476
Number of pages2
JournalElectronics Letters
Volume39
Issue number20
DOIs
StatePublished - Oct 2 2003

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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