InP/InGaAs SHBTs with 75 nm collector and ft> 500 GHz

W. Hafez, Jie Wei Lai, M. Feng

Research output: Contribution to journalArticlepeer-review


InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35 × 12 μm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100kA/cm2. This work demonstrates clear progress toward a THz transistor.

Original languageEnglish (US)
Pages (from-to)1475-1476
Number of pages2
JournalElectronics Letters
Issue number20
StatePublished - Oct 2 2003

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of 'InP/InGaAs SHBTs with 75 nm collector and ft> 500 GHz'. Together they form a unique fingerprint.

Cite this