InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer

Yong Huang, Jae Hyun Ryou, Russell D. Dupuis, Forest Dixon, Milton Feng, Nick Holonyak

Research output: Contribution to journalArticlepeer-review

Abstract

Characteristics of InP/InAlGaAs light-emitting transistors (LETs) and transistor lasers (TLs) using carbon (C) for p-type doping of the base region were investigated. The N-InP/p-In0.52(Al0.4Ga 0.6)0.48As/N-In0.52Al0.48As LETs show a current gain of 0.22 and light emission at wavelength of ∼ 1610 nm. The low current gain is attributed to the short minority carrier lifetime in the C-doped base with a quantum well. The TL demonstrates continuous-wave operation at -190 C with a threshold current of IB 35 mA. By comparing the optical output characteristics of the TL and a laser diode with similar structure, it is suggested that the low differential quantum efficiency and the high threshold current density in the TL is related to the strong inter-valence band absorption in the heavily doped base layer.

Original languageEnglish (US)
Article number063106
JournalJournal of Applied Physics
Volume109
Issue number6
DOIs
StatePublished - Mar 15 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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