InP/GaAsSb type-II DHBTs with fT> 350 GHz

B. F. Chu-Kung; M. Feng

doi:10.1049/el:20046286

InP/GaAsSb type-II DHBTs with f_T> 350 GHz

B. F. Chu-Kung, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Type-II InP/GaAsSb double heterojunotion bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak f_T of 358 GHz. The device consists of a 0.35 × 8 μm emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BV_CEO 4 V and a maximum DC current gain (β) of 19. The peak RF operating collector current density exceeds 900 kA/cm².

Original language	English (US)
Pages (from-to)	1305-1307
Number of pages	3
Journal	Electronics Letters
Volume	40
Issue number	20
DOIs	https://doi.org/10.1049/el:20046286
State	Published - Sep 30 2004

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20046286

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Cite this

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title = "InP/GaAsSb type-II DHBTs with fT> 350 GHz",

abstract = "Type-II InP/GaAsSb double heterojunotion bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak fT of 358 GHz. The device consists of a 0.35 × 8 μm emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BVCEO 4 V and a maximum DC current gain (β) of 19. The peak RF operating collector current density exceeds 900 kA/cm2.",

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AU - Feng, M.

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AB - Type-II InP/GaAsSb double heterojunotion bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak fT of 358 GHz. The device consists of a 0.35 × 8 μm emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BVCEO 4 V and a maximum DC current gain (β) of 19. The peak RF operating collector current density exceeds 900 kA/cm2.

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