InP/GaAsSb type-II DHBTs with fT> 350 GHz

B. F. Chu-Kung, Milton Feng

Research output: Contribution to journalArticlepeer-review

Abstract

Type-II InP/GaAsSb double heterojunotion bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak fT of 358 GHz. The device consists of a 0.35 × 8 μm emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BVCEO 4 V and a maximum DC current gain (β) of 19. The peak RF operating collector current density exceeds 900 kA/cm2.

Original languageEnglish (US)
Pages (from-to)1305-1307
Number of pages3
JournalElectronics Letters
Volume40
Issue number20
DOIs
StatePublished - Sep 30 2004

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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