Type-II InP/GaAsSb double heterojunotion bipolar transistors (DHBTs) were fabricated and achieved a state-of-the-art peak fT of 358 GHz. The device consists of a 0.35 × 8 μm emitter with a 25 nm GaAsSb strained base and a 75 nm InP collector. The transistor exhibits a BVCEO 4 V and a maximum DC current gain (β) of 19. The peak RF operating collector current density exceeds 900 kA/cm2.
ASJC Scopus subject areas
- Electrical and Electronic Engineering