InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) with Ft > 750GHz

Milton Feng, Williams Snodgrass

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publicationIPRM'07
Subtitle of host publicationIEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
Pages399-402
Number of pages4
DOIs
StatePublished - Oct 2 2007
EventIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
Duration: May 14 2007May 18 2007

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Other

OtherIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
Country/TerritoryJapan
CityMatsue
Period5/14/075/18/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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