InP FinFETs with damage-free and record high-aspect-ratio (45:1) fins fabricated by metal-assisted chemical etching

Yi Song, Parsian K. Mohseni, Seung Hyun Kim, Jae Cheol Shin, Chen Zhang, Kelson Chabak, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering