Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film

Q. S. Zhu, Z. F. Zhang, Z. G. Wang, J. K. Shang

Research output: Contribution to journalArticlepeer-review

Abstract

Electrodeposited Ag film was explored as a potential interfacial barrier to Bi segregation for suppressing the interfacial embrittlement of Cu/ SnBi interconnects. The presence of Ag film introduced Ag3Sn intermetallic layer at the interface, which effectively prevented Bi from reaching the Cu/intermetallic interface. When the persistent slip bands (PSBs) in the Cu single crystal were driven to impinge the Cu/Cu3Sn interface, interfacial cracking was averted and instead superceded by cracking of intermetallic compounds (IMCs) at the interface.

Original languageEnglish (US)
Pages (from-to)78-82
Number of pages5
JournalJournal of Materials Research
Volume23
Issue number1
DOIs
StatePublished - Jan 2008

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film'. Together they form a unique fingerprint.

Cite this