InGaP/GaAs heterojunction bipolar transistor grown on a semi-insulating InGaP buffer layer

D. A. Ahmari, M. T. Fresina, Q. J. Hartmann, D. W. Barlage, M. Feng, G. E. Stillman

Research output: Contribution to journalArticlepeer-review

Abstract

To improve electrical isolation and simplify the heterojunction bipolar transistor (HBT) fabrication process, a semi-insulating InGaP buffer layer has been employed in an InGaP/GaAs HBT. Data is presented that demonstrates this buffer layer serves as an excellent isolation material. In addition, high-frequency HBT's have been fabricated and characterized to show that the buffer layer does not degrade device performance.

Original languageEnglish (US)
Pages (from-to)559-561
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number11
DOIs
StatePublished - Nov 1997

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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