InGaP/GaAs HBT/PIN technology for 20 Gb/s and 40 Gb/s OEICs

J. H. Mu, M. Feng

Research output: Contribution to journalConference articlepeer-review

Abstract

With increasing demands for wireless data transfer, networking, graphics, and high-speed communications using the Internet, 10 Gb/s and 40 Gb/s are expected to become the standard fiber-optic operating speed for the future datacommunication and telecommunication systems. In this paper, photoreceivers using PIN/HBT are investigated for 20 Gb/s and 40 Gb/s OEIC applications. A 20-Gb/s and a 40 Gb/s short wavelength PIN/HBT photoreceivers (PIN_TZ_1L4 and PIN_TZ_1L1_L) are presented. Implemented using fT = 60 GHz InGaP/GaAs HBT technology, PIN_TZ_1L4 has simulated 3-dB bandwidth of 17.4 GHz with 43.3 dB Ω gain using a 25-μm diameter PIN photodetector. PIN_TZ_1L1_L using inductor peaking technique has simulated -3 dB bandwidth of 33.5 GHz with 49.3 dB Ω gain using a 10-μm diameter PIN photodetector. By using multi-channel Wavelength Division Multiplexing (WDM) receiver, we are designing two-dimension receiver arrays (2×2) that are capable of receiving data rate of 80 Gb/s or higher. Fabrication and measurement of the new designs are currently under way.

Original languageEnglish (US)
Pages (from-to)182-191
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4111
DOIs
StatePublished - 2000
EventTerahertz and Gigahertz Electronics and Photonics II - San Diego, CA, USA
Duration: Jul 31 2000Aug 2 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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