InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication

M. T. Fresina; Q. J. Hartmann; S. Thomas; D. A. Ahmari; D. Caruth; M. Feng; G. E. Stillman

doi:10.1109/IEDM.1996.553569

InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication

M. T. Fresina
, Q. J. Hartmann
, S. Thomas
, D. A. Ahmari
, D. Caruth
, M. Feng
, G. E. Stillman

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.

Original language	English (US)
Pages (from-to)	207-210
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.1996.553569
State	Published - 1996
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 8 1996 → Dec 11 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.1996.553569

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@article{fc55386e248b4206b4583c8a95cbc434,

title = "InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication",

abstract = "A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.",

author = "Fresina, \{M. T.\} and Hartmann, \{Q. J.\} and S. Thomas and Ahmari, \{D. A.\} and D. Caruth and M. Feng and Stillman, \{G. E.\}",

note = "This work was supported by DARPA (DAAH04-93-G-0172) and the National Science Foundation (NSF ECD 89-43166).; Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

year = "1996",

doi = "10.1109/IEDM.1996.553569",

language = "English (US)",

pages = "207--210",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication

AU - Fresina, M. T.

AU - Hartmann, Q. J.

AU - Thomas, S.

AU - Ahmari, D. A.

AU - Caruth, D.

AU - Feng, M.

AU - Stillman, G. E.

N1 - This work was supported by DARPA (DAAH04-93-G-0172) and the National Science Foundation (NSF ECD 89-43166).

PY - 1996

Y1 - 1996

N2 - A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.

AB - A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.

UR - https://www.scopus.com/pages/publications/0030387668

UR - https://www.scopus.com/pages/publications/0030387668#tab=citedBy

U2 - 10.1109/IEDM.1996.553569

DO - 10.1109/IEDM.1996.553569

M3 - Conference article

AN - SCOPUS:0030387668

SN - 0163-1918

SP - 207

EP - 210

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication

Abstract

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