InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication

M. T. Fresina; Q. J. Hartmann; S. Thomas; D. A. Ahmari; D. Caruth; M. Feng; G. E. Stillman

doi:10.1109/IEDM.1996.553569

InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication

M. T. Fresina, Q. J. Hartmann, S. Thomas, D. A. Ahmari, D. Caruth, M. Feng, G. E. Stillman

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.

Original language	English (US)
Pages (from-to)	207-210
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
DOIs	https://doi.org/10.1109/IEDM.1996.553569
State	Published - 1996
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 8 1996 → Dec 11 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.1996.553569

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@article{fc55386e248b4206b4583c8a95cbc434,

title = "InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication",

abstract = "A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.",

author = "Fresina, {M. T.} and Hartmann, {Q. J.} and S. Thomas and Ahmari, {D. A.} and D. Caruth and M. Feng and Stillman, {G. E.}",

note = "Publisher Copyright: {\textcopyright} 1996 IEEE; Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

year = "1996",

doi = "10.1109/IEDM.1996.553569",

language = "English (US)",

pages = "207--210",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication

AU - Fresina, M. T.

AU - Hartmann, Q. J.

AU - Thomas, S.

AU - Ahmari, D. A.

AU - Caruth, D.

AU - Feng, M.

AU - Stillman, G. E.

PY - 1996

Y1 - 1996

N2 - A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.

AB - A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.

UR - http://www.scopus.com/inward/record.url?scp=0030387668&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030387668&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1996.553569

DO - 10.1109/IEDM.1996.553569

M3 - Conference article

AN - SCOPUS:0030387668

SN - 0163-1918

SP - 207

EP - 210

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

InGaP/GaAs HBT with Novel Layer Structure for Emitter Ledge Fabrication

Abstract

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