InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication

M. T. Fresina, Q. J. Hartmann, S. Thomas, D. A. Ahmari, D. Caruth, M. Feng, G. E. Stillman

Research output: Contribution to journalConference article

Abstract

A novel HBT structure has been utilized to fabricate emitter ledges using a simple, selective wet chemical etch process. This structure eliminates the need for photoresist or dielectric etch masks in the fabrication of self-aligned ledges and enables the use of highly-selective wet chemical etches in forming an InGaP ledge. Small-area devices have been demonstrated with improved gain and excellent high-frequency performance.

Original languageEnglish (US)
Pages (from-to)207-210
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 8 1996Dec 11 1996

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Fresina, M. T., Hartmann, Q. J., Thomas, S., Ahmari, D. A., Caruth, D., Feng, M., & Stillman, G. E. (1996). InGaP/GaAs HBT with novel layer structure for emitter ledge fabrication. Technical Digest - International Electron Devices Meeting, 207-210.