InGaN-based flexible light emitting diodes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Novel layer release and transfer technology of single-crystalline GaN semiconductors is attractive for enabling many novel applications including flexible photonics and hybrid device integration. To date, light emitting diode (LED) research has been primarily focused on rigid devices due to the thick growth substrate. This prevented fundamental research in flexible inorganic LEDs, and limited the applications of LEDs in the solid state lighting (due to the substrate cost) and in biophotonics (i.e. optogenetics) (due to LED rigidness). In the literature, a number of methods to achieve layer transfer have been reported including the laser lift-off, chemical lift-off, and Smartcut. However, the release of films of LED layers (i.e. GaN semiconductors) has been challenging since their elastic moduli and chemical resistivity are much higher than most conventional semiconductors. In this talk, we are going to review the existing technologies and new mechanical release techniques (i.e. spalling) to overcome these problems.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices XII
EditorsJen-Inn Chyi, Jong-In Shim, Hiroshi Fujioka, Ulrich T. Schwarz, Hadis Morkoc, Yasushi Nanishi
PublisherSPIE
ISBN (Electronic)9781510606494
DOIs
StatePublished - Jan 1 2017
EventGallium Nitride Materials and Devices XII - San Francisco, United States
Duration: Jan 30 2017Feb 2 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10104
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

OtherGallium Nitride Materials and Devices XII
CountryUnited States
CitySan Francisco
Period1/30/172/2/17

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Keywords

  • Chemical lift-off
  • Flexible
  • Gallium nitride
  • Laser lift-off
  • Light emitting diode
  • Smartcut
  • Spalling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Bayram, C. (2017). InGaN-based flexible light emitting diodes. In J-I. Chyi, J-I. Shim, H. Fujioka, U. T. Schwarz, H. Morkoc, & Y. Nanishi (Eds.), Gallium Nitride Materials and Devices XII [101041Y] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10104). SPIE. https://doi.org/10.1117/12.2251618