InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

R. M. Lammert; A. M. Jones; C. T. Youtsey; J. S. Hughes; S. D. Roh; I. Adesida; J. J. Coleman

doi:10.1109/68.634703

InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

R. M. Lammert, A. M. Jones, C. T. Youtsey, J. S. Hughes, S. D. Roh, I. Adesida, J. J. Coleman

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Abstract

The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-μm exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-μm operates on a single longitudinal mode with about 40-dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 Å.

Original language	English (US)
Pages (from-to)	1445-1447
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	9
Issue number	11
DOIs	https://doi.org/10.1109/68.634703
State	Published - Nov 1997

Keywords

Distributed Bragg reflector lasers
Gratings
Quantum-well lasers
Semiconductor lasers
Strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/68.634703

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title = "InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE",

abstract = "The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-μm exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-μm operates on a single longitudinal mode with about 40-dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 {\AA}.",

keywords = "Distributed Bragg reflector lasers, Gratings, Quantum-well lasers, Semiconductor lasers, Strain",

author = "Lammert, {R. M.} and Jones, {A. M.} and Youtsey, {C. T.} and Hughes, {J. S.} and Roh, {S. D.} and I. Adesida and Coleman, {J. J.}",

note = "Funding Information: Manuscript received April 18, 1997; revised July 21, 1997. This work was supported by the National Science Foundation under Grant ECD 89-43166, by the ARPA Center for Optoelectronic Science and Technology under Contract MDA972-94-1-004, and the Joint Services Electronics Program under Grant N0014-90-J-1270. The work of R. M. Lammert was supported in part by a fellowship from Rockwell International.",

year = "1997",

month = nov,

doi = "10.1109/68.634703",

language = "English (US)",

volume = "9",

pages = "1445--1447",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

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TY - JOUR

T1 - InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

AU - Lammert, R. M.

AU - Jones, A. M.

AU - Youtsey, C. T.

AU - Hughes, J. S.

AU - Roh, S. D.

AU - Adesida, I.

AU - Coleman, J. J.

N1 - Funding Information: Manuscript received April 18, 1997; revised July 21, 1997. This work was supported by the National Science Foundation under Grant ECD 89-43166, by the ARPA Center for Optoelectronic Science and Technology under Contract MDA972-94-1-004, and the Joint Services Electronics Program under Grant N0014-90-J-1270. The work of R. M. Lammert was supported in part by a fellowship from Rockwell International.

PY - 1997/11

Y1 - 1997/11

N2 - The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-μm exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-μm operates on a single longitudinal mode with about 40-dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 Å.

AB - The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-μm exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-μm operates on a single longitudinal mode with about 40-dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 Å.

KW - Distributed Bragg reflector lasers

KW - Gratings

KW - Quantum-well lasers

KW - Semiconductor lasers

KW - Strain

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InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

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