InGaAs/GaP quantum dot light-emitting diodes on Si

Yuncheng Song, Minjoo Larry Lee

Research output: Contribution to journalArticlepeer-review


We report on the growth, structure, and luminescence of In 0.5Ga0.5As/GaP self-assembled quantum dots (SAQDs) on exact Si (001) by means of an epitaxial GaP/Si template. In situ reflection high-energy electron diffraction showed indistinguishable transitions during SAQD growth, indicating similar growth kinetics on GaP/Si and bulk GaP. In 0.5Ga0.5As SAQD stacks on both substrates yielded nearly identical photoluminescence spectra, with peak position, peak-width, and integrated intensity varying by 5. We then describe the characteristics of In0.5Ga0.5As/GaP SAQD light-emitting diodes on Si. These results demonstrate that combining In0.5Ga0.5As/GaP SAQDs with GaP/Si templates provides a novel path for monolithic integration of optoelectronics with Si.

Original languageEnglish (US)
Article number141906
JournalApplied Physics Letters
Issue number14
StatePublished - Sep 30 2013
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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