InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Xue Huang, Yuncheng Song, Taizo Masuda, Daehwan Jung, Minjoo Lee

Research output: Contribution to journalArticlepeer-review


InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 μm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP and GaAs, due to the thermal mismatch with the Si substrate.

Original languageEnglish (US)
Pages (from-to)1226-1227
Number of pages2
JournalElectronics Letters
Issue number17
StatePublished - Aug 14 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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