InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Xue Huang; Yuncheng Song; Taizo Masuda; Daehwan Jung; Minjoo Lee

doi:10.1049/el.2014.2077

InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

Xue Huang, Yuncheng Song, Taizo Masuda, Daehwan Jung, Minjoo Lee

Research output: Contribution to journal › Article › peer-review

Abstract

InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 μm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm², respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP and GaAs, due to the thermal mismatch with the Si substrate.

Original language	English (US)
Pages (from-to)	1226-1227
Number of pages	2
Journal	Electronics Letters
Volume	50
Issue number	17
DOIs	https://doi.org/10.1049/el.2014.2077
State	Published - Aug 14 2014
Externally published	Yes

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Electrical and Electronic Engineering

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10.1049/el.2014.2077

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abstract = "InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 μm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP and GaAs, due to the thermal mismatch with the Si substrate.",

author = "Xue Huang and Yuncheng Song and Taizo Masuda and Daehwan Jung and Minjoo Lee",

year = "2014",

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doi = "10.1049/el.2014.2077",

language = "English (US)",

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journal = "Electronics Letters",

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T1 - InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

AU - Huang, Xue

AU - Song, Yuncheng

AU - Masuda, Taizo

AU - Jung, Daehwan

AU - Lee, Minjoo

PY - 2014/8/14

Y1 - 2014/8/14

N2 - InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 μm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP and GaAs, due to the thermal mismatch with the Si substrate.

AB - InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 μm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP and GaAs, due to the thermal mismatch with the Si substrate.

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JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

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