InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights

W. A. Wohlmuth; M. Arafa; A. Mahajan; P. Fay; I. Adesida

doi:10.1063/1.117212

InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights

W. A. Wohlmuth, M. Arafa, A. Mahajan, P. Fay, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

An InAlAs/InGaAs/InP metal-semiconductor-metal photodetector with engineered Schottky barrier heights has been fabricated. A significant decrease in dark current with no change in the responsivity or the bandwidth was obtained by independently engineering the Schottky barrier heights at the anode and cathode. These photodiodes with an electrode width and spacing of 2 μm exhibited a dark current density of 20.0 fA/μm² at an applied bias of 5 V. This dark current density is ∼6 times lower than the previously reported minimum.

Original language	English (US)
Pages (from-to)	3578-3580
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	23
DOIs	https://doi.org/10.1063/1.117212
State	Published - Dec 2 1996
Externally published	Yes

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Physics and Astronomy (miscellaneous)

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10.1063/1.117212

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title = "InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights",

abstract = "An InAlAs/InGaAs/InP metal-semiconductor-metal photodetector with engineered Schottky barrier heights has been fabricated. A significant decrease in dark current with no change in the responsivity or the bandwidth was obtained by independently engineering the Schottky barrier heights at the anode and cathode. These photodiodes with an electrode width and spacing of 2 μm exhibited a dark current density of 20.0 fA/μm2 at an applied bias of 5 V. This dark current density is ∼6 times lower than the previously reported minimum.",

author = "Wohlmuth, {W. A.} and M. Arafa and A. Mahajan and P. Fay and I. Adesida",

year = "1996",

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AU - Wohlmuth, W. A.

AU - Arafa, M.

AU - Mahajan, A.

AU - Fay, P.

AU - Adesida, I.

PY - 1996/12/2

Y1 - 1996/12/2

N2 - An InAlAs/InGaAs/InP metal-semiconductor-metal photodetector with engineered Schottky barrier heights has been fabricated. A significant decrease in dark current with no change in the responsivity or the bandwidth was obtained by independently engineering the Schottky barrier heights at the anode and cathode. These photodiodes with an electrode width and spacing of 2 μm exhibited a dark current density of 20.0 fA/μm2 at an applied bias of 5 V. This dark current density is ∼6 times lower than the previously reported minimum.

AB - An InAlAs/InGaAs/InP metal-semiconductor-metal photodetector with engineered Schottky barrier heights has been fabricated. A significant decrease in dark current with no change in the responsivity or the bandwidth was obtained by independently engineering the Schottky barrier heights at the anode and cathode. These photodiodes with an electrode width and spacing of 2 μm exhibited a dark current density of 20.0 fA/μm2 at an applied bias of 5 V. This dark current density is ∼6 times lower than the previously reported minimum.

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InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights

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