We demonstrate the ability of infrared reflectance spectroscopy to monitor the nature of SiH bonding in a-SiH films only ∼10Å thick. Measurements on reactive dc magnetron sputtered samples clearly show a SiH stretching mode at 2100cm-1 in the thinnest films. The results also show systematic variations with film thickness and the hydrogen partial pressure during deposition. A simple model is presented to explain the observed results.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry