Abstract
We demonstrate the ability of infrared reflectance spectroscopy to monitor the nature of SiH bonding in a-SiH films only ∼10Å thick. Measurements on reactive dc magnetron sputtered samples clearly show a SiH stretching mode at 2100cm-1 in the thinnest films. The results also show systematic variations with film thickness and the hydrogen partial pressure during deposition. A simple model is presented to explain the observed results.
Original language | English (US) |
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Pages (from-to) | 163-165 |
Number of pages | 3 |
Journal | Journal of Non-Crystalline Solids |
Volume | 114 |
Issue number | PART 1 |
DOIs | |
State | Published - Dec 1 1989 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry