Infrared absorption and thermal evolution study of hydrogen bonding in a-SiH

N. Maley, A. Myers, M. Pinarbasi, D. Leet, J. R. Abelson, J. A. Thornton

Research output: Contribution to journalArticle

Abstract

Hydrogenated amorphous silicon (a-SiH) films were prepared by reactive dc magnetron sputtering under a wide range of conditions. The amount of hydrogen in the films CHand the nature of the Si−H bond were studied using infrared (IR) absorption and thermal evolution of H2. Hydrogen content varied between 2 and 40 at. %. The trends in the IR spectra are qualitatively similar to those previously reported. For low CHthe thermal evolution spectra show a single peak centered around 600 °C, and with increasing CH, two additional peaks at ~ 500 and 400 °C A comparison of the IR and evolution spectra of the sputtered films yields an oscillator strength of 2.0X 1019/cm2 for the 640 cm-1 wagging mode. This is 25% higher than the value previously reported for glow discharge and rf sputtered films. The hydrogen evolving from the 400 and 500 °C peaks correlates well with the integrated absorption of the 2100 cm-1 stretching mode. However, no good correlation is found between the high-temperature evolution peak and the 2000 cm-1 stretching mode. Our results enable us to define a CH independent oscillator strength for the 2100 cm-1 mode, but not for the 2000 cm-1 mode.

Original languageEnglish (US)
Pages (from-to)1267-1270
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number3
DOIs
StatePublished - May 1989

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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