Abstract
We examine the influence of the wetting layers (WLs) and the quantum dot (QD) size distribution on the sub-bandgap external quantum efficiency (EQE) of QD solar cells. We use a finite-element Schrdinger-Poisson model that considers QD and wetting layer shapes, sizes, and spacings from cross-sectional scanning tunneling and atomic force micrographs. A comparison between experiments and computations reveals an insignificant contribution of the WL to the sub-bandgap EQE and a broadening of sub-bandgap EQE associated with a variation in QD sizes in the growth direction.
| Original language | English (US) |
|---|---|
| Article number | 073105 |
| Journal | Journal of Applied Physics |
| Volume | 110 |
| Issue number | 7 |
| DOIs | |
| State | Published - Oct 1 2011 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices. / Huang, S.; Semichaevsky, A. V.; Webster, L.; Johnson, H. T.; Goldman, R. S.
In: Journal of Applied Physics, Vol. 110, No. 7, 073105, 01.10.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices
AU - Huang, S.
AU - Semichaevsky, A. V.
AU - Webster, L.
AU - Johnson, H. T.
AU - Goldman, R. S.
PY - 2011/10/1
Y1 - 2011/10/1
N2 - We examine the influence of the wetting layers (WLs) and the quantum dot (QD) size distribution on the sub-bandgap external quantum efficiency (EQE) of QD solar cells. We use a finite-element Schrdinger-Poisson model that considers QD and wetting layer shapes, sizes, and spacings from cross-sectional scanning tunneling and atomic force micrographs. A comparison between experiments and computations reveals an insignificant contribution of the WL to the sub-bandgap EQE and a broadening of sub-bandgap EQE associated with a variation in QD sizes in the growth direction.
AB - We examine the influence of the wetting layers (WLs) and the quantum dot (QD) size distribution on the sub-bandgap external quantum efficiency (EQE) of QD solar cells. We use a finite-element Schrdinger-Poisson model that considers QD and wetting layer shapes, sizes, and spacings from cross-sectional scanning tunneling and atomic force micrographs. A comparison between experiments and computations reveals an insignificant contribution of the WL to the sub-bandgap EQE and a broadening of sub-bandgap EQE associated with a variation in QD sizes in the growth direction.
UR - http://www.scopus.com/inward/record.url?scp=80054967632&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80054967632&partnerID=8YFLogxK
U2 - 10.1063/1.3631785
DO - 10.1063/1.3631785
M3 - Article
AN - SCOPUS:80054967632
VL - 110
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
M1 - 073105
ER -