Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

S. Huang; A. V. Semichaevsky; L. Webster; H. T. Johnson; R. S. Goldman

doi:10.1063/1.3631785

Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

S. Huang, A. V. Semichaevsky, L. Webster, H. T. Johnson, R. S. Goldman

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Abstract

We examine the influence of the wetting layers (WLs) and the quantum dot (QD) size distribution on the sub-bandgap external quantum efficiency (EQE) of QD solar cells. We use a finite-element Schrdinger-Poisson model that considers QD and wetting layer shapes, sizes, and spacings from cross-sectional scanning tunneling and atomic force micrographs. A comparison between experiments and computations reveals an insignificant contribution of the WL to the sub-bandgap EQE and a broadening of sub-bandgap EQE associated with a variation in QD sizes in the growth direction.

Original language	English (US)
Article number	073105
Journal	Journal of Applied Physics
Volume	110
Issue number	7
DOIs	https://doi.org/10.1063/1.3631785
State	Published - Oct 1 2011

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ASJC Scopus subject areas

Physics and Astronomy(all)

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Huang, S., Semichaevsky, A. V., Webster, L., Johnson, H. T., & Goldman, R. S. (2011). Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices. Journal of Applied Physics, 110(7), [073105]. https://doi.org/10.1063/1.3631785

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10.1063/1.3631785