@article{7b02eed33245488694bfb2c20bf61e54,
title = "Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices",
abstract = "We examine the influence of the wetting layers (WLs) and the quantum dot (QD) size distribution on the sub-bandgap external quantum efficiency (EQE) of QD solar cells. We use a finite-element Schrdinger-Poisson model that considers QD and wetting layer shapes, sizes, and spacings from cross-sectional scanning tunneling and atomic force micrographs. A comparison between experiments and computations reveals an insignificant contribution of the WL to the sub-bandgap EQE and a broadening of sub-bandgap EQE associated with a variation in QD sizes in the growth direction.",
author = "S. Huang and Semichaevsky, {A. V.} and L. Webster and Johnson, {H. T.} and Goldman, {R. S.}",
note = "Funding Information: We gratefully acknowledge partial support of the National Science Foundation through Grant No. CBET 09-33348. AVS, HTJ, and LW were supported in part by DOE-BES Grant No. DE-FG02-06EF46339. SH and RSG were supported by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0000957. Authors SH and AVS contributed equally to this work. The authors would like to thank Kuen-Ting Shiu and Kyusang Lee for assistance with device fabrication and measurements. ",
year = "2011",
month = oct,
day = "1",
doi = "10.1063/1.3631785",
language = "English (US)",
volume = "110",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",
}