Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices

S. Huang, A. V. Semichaevsky, L. Webster, H. T. Johnson, R. S. Goldman

Research output: Contribution to journalArticle

Abstract

We examine the influence of the wetting layers (WLs) and the quantum dot (QD) size distribution on the sub-bandgap external quantum efficiency (EQE) of QD solar cells. We use a finite-element Schrdinger-Poisson model that considers QD and wetting layer shapes, sizes, and spacings from cross-sectional scanning tunneling and atomic force micrographs. A comparison between experiments and computations reveals an insignificant contribution of the WL to the sub-bandgap EQE and a broadening of sub-bandgap EQE associated with a variation in QD sizes in the growth direction.

Original languageEnglish (US)
Article number073105
JournalJournal of Applied Physics
Volume110
Issue number7
DOIs
StatePublished - Oct 1 2011

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wetting
superlattices
quantum dots
quantum efficiency
solar cells
spacing
scanning

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices. / Huang, S.; Semichaevsky, A. V.; Webster, L.; Johnson, H. T.; Goldman, R. S.

In: Journal of Applied Physics, Vol. 110, No. 7, 073105, 01.10.2011.

Research output: Contribution to journalArticle

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