Influence of Ti doping on the incommensurate charge density wave in 1T-TaS2

X. M. Chen, A. J. Miller, C. Nugroho, G. A. De La Peña, Y. I. Joe, A. Kogar, J. D. Brock, J. Geck, G. J. Macdougall, S. L. Cooper, E. Fradkin, D. J. Van Harlingen, P. Abbamonte

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We report temperature-dependent transport and x-ray diffraction measurements of the influence of Ti hole doping on the charge density wave (CDW) in 1T-Ta1-xTixS2. Confirming past studies, we find that even trace impurities eliminate the low-temperature commensurate (C) phase in this system. Surprisingly, the magnitude of the in-plane component of the CDW wave vector in the nearly commensurate (NC) phase does not change significantly with Ti concentration, as might be expected from a changing Fermi surface volume. Instead, the angle of the CDW in the basal plane rotates, from 11.9- at x=0 to 16.4- at x=0.12. Ti substitution also leads to an extended region of coexistence between incommensurate (IC) and NC phases, indicating heterogeneous nucleation near the transition. Finally, we explain a resistive anomaly originally observed by Di Salvo [F. J. Di Salvo et al., Phys. Rev. B 12, 2220 (1975)0556-280510.1103/PhysRevB.12.2220] as arising from pinning of the CDW on the crystal lattice. Our study highlights the importance of commensuration effects in the NC phase, particularly at x∼0.08.

Original languageEnglish (US)
Article number245113
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number24
StatePublished - Jun 8 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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