Influence of surface chemistry on ultrashallow junction formation

Research output: Contribution to conferencePaperpeer-review

Abstract

Recent work in this laboratory has suggested that for semiconductors, control of the chemical state at a surface can influence important properties of the underlying bulk. For example, the annihilation probability affects the average interstitial concentration in the bulk, that in turn influences dopant diffusion and activation in post-implant annealing for ultrashallow junction formation. Here, an experimental method employing isotopic labeling techniques is described that can measure the interstitial annihilation probability.

Original languageEnglish (US)
Pages66-70
Number of pages5
StatePublished - Oct 28 2004
EventAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: May 10 2004May 12 2004

Other

OtherAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period5/10/045/12/04

ASJC Scopus subject areas

  • Engineering(all)

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