Abstract
Recent work in this laboratory has suggested that for semiconductors, control of the chemical state at a surface can influence important properties of the underlying bulk. For example, the annihilation probability affects the average interstitial concentration in the bulk, that in turn influences dopant diffusion and activation in post-implant annealing for ultrashallow junction formation. Here, an experimental method employing isotopic labeling techniques is described that can measure the interstitial annihilation probability.
| Original language | English (US) |
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| Pages | 66-70 |
| Number of pages | 5 |
| State | Published - 2004 |
| Event | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 10 2004 → May 12 2004 |
Other
| Other | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium |
|---|---|
| Country/Territory | United States |
| City | San Antonio, TX |
| Period | 5/10/04 → 5/12/04 |
ASJC Scopus subject areas
- General Engineering