Influence of surface adsorption in improving ultrashallow junction formation

Ramakrishnan Vaidyanathan; Edmund G. Seebauer; Houda Graoui; Majeed A. Foad

doi:10.1063/1.2360917

Influence of surface adsorption in improving ultrashallow junction formation

Ramakrishnan Vaidyanathan, Edmund G. Seebauer, Houda Graoui, Majeed A. Foad

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The continual downscaling of silicon devices for integrated circuits requires the formation of transistor (p-n) junctions that are progressively shallower yet incorporate increasing levels of electrically active dopant. In the case of implanted arsenic, the authors show that both goals can be accomplished simultaneously and controllably through the adsorption of small amounts of atomic nitrogen on the Si(100) surface.

Original language	English (US)
Article number	152114
Journal	Applied Physics Letters
Volume	89
Issue number	15
DOIs	https://doi.org/10.1063/1.2360917
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.2360917

Library availability

Discover UIUC Full Text

Cite this

@article{1afd0b1bc39a418f932099803b44cd94,

title = "Influence of surface adsorption in improving ultrashallow junction formation",

abstract = "The continual downscaling of silicon devices for integrated circuits requires the formation of transistor (p-n) junctions that are progressively shallower yet incorporate increasing levels of electrically active dopant. In the case of implanted arsenic, the authors show that both goals can be accomplished simultaneously and controllably through the adsorption of small amounts of atomic nitrogen on the Si(100) surface.",

author = "Ramakrishnan Vaidyanathan and Seebauer, {Edmund G.} and Houda Graoui and Foad, {Majeed A.}",

year = "2006",

doi = "10.1063/1.2360917",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Influence of surface adsorption in improving ultrashallow junction formation

AU - Vaidyanathan, Ramakrishnan

AU - Seebauer, Edmund G.

AU - Graoui, Houda

AU - Foad, Majeed A.

PY - 2006

Y1 - 2006

N2 - The continual downscaling of silicon devices for integrated circuits requires the formation of transistor (p-n) junctions that are progressively shallower yet incorporate increasing levels of electrically active dopant. In the case of implanted arsenic, the authors show that both goals can be accomplished simultaneously and controllably through the adsorption of small amounts of atomic nitrogen on the Si(100) surface.

AB - The continual downscaling of silicon devices for integrated circuits requires the formation of transistor (p-n) junctions that are progressively shallower yet incorporate increasing levels of electrically active dopant. In the case of implanted arsenic, the authors show that both goals can be accomplished simultaneously and controllably through the adsorption of small amounts of atomic nitrogen on the Si(100) surface.

UR - http://www.scopus.com/inward/record.url?scp=33749986002&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749986002&partnerID=8YFLogxK

U2 - 10.1063/1.2360917

DO - 10.1063/1.2360917

M3 - Article

AN - SCOPUS:33749986002

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152114

ER -

Influence of surface adsorption in improving ultrashallow junction formation

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this