Influence of surface adsorption in improving ultrashallow junction formation

Ramakrishnan Vaidyanathan, Edmund G. Seebauer, Houda Graoui, Majeed A. Foad

Research output: Contribution to journalArticle

Abstract

The continual downscaling of silicon devices for integrated circuits requires the formation of transistor (p-n) junctions that are progressively shallower yet incorporate increasing levels of electrically active dopant. In the case of implanted arsenic, the authors show that both goals can be accomplished simultaneously and controllably through the adsorption of small amounts of atomic nitrogen on the Si(100) surface.

Original languageEnglish (US)
Article number152114
JournalApplied Physics Letters
Volume89
Issue number15
DOIs
StatePublished - Oct 20 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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