Abstract
Charge transport through the crystal lattice of a nanoelectronic device occurs quantum mechanically. Incompatible elastic strain introduced during fabrication of a device modifies the lattice and, therefore, its functional characteristics can be affected. In this article, a computational model for assessing this influence is described. Consequences of strain which are expected to be significant for model development are identified and the modifications necessary in the Schrodinger equation, the governing equation for transport, to account for strain are indicated. The densities of confined electronic states which arise in a particular columnar SiGe device configuration are determined for a range of column diameters by means of the numerical finite element method, providing a quantitative illustration of the influence of strain on device characteristics.
Original language | English (US) |
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Pages (from-to) | 1925-1935 |
Number of pages | 11 |
Journal | Journal of the Mechanics and Physics of Solids |
Volume | 49 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2001 |
Externally published | Yes |
Keywords
- B. semiconductor material
- C. finite elements
- Thin films
ASJC Scopus subject areas
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics