Influence of strain on functional characteristics of nanoelectronic devices

L. B. Freund, H. T. Johnson

Research output: Contribution to journalArticle

Abstract

Charge transport through the crystal lattice of a nanoelectronic device occurs quantum mechanically. Incompatible elastic strain introduced during fabrication of a device modifies the lattice and, therefore, its functional characteristics can be affected. In this article, a computational model for assessing this influence is described. Consequences of strain which are expected to be significant for model development are identified and the modifications necessary in the Schrodinger equation, the governing equation for transport, to account for strain are indicated. The densities of confined electronic states which arise in a particular columnar SiGe device configuration are determined for a range of column diameters by means of the numerical finite element method, providing a quantitative illustration of the influence of strain on device characteristics.

Original languageEnglish (US)
Pages (from-to)1925-1935
Number of pages11
JournalJournal of the Mechanics and Physics of Solids
Volume49
Issue number9
DOIs
StatePublished - Sep 1 2001
Externally publishedYes

Keywords

  • B. semiconductor material
  • C. finite elements
  • Thin films

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Condensed Matter Physics

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