@article{1ad248a5cdbc42608ad4ab38b4efdc55,
title = "Influence of Mn dopants on InAs/GaAs quantum dot electronic states",
abstract = "We have investigated the influence of Mn dopants on the electronic states in the vicinity of InAs/GaAs quantum dots (QDs) and the surrounding GaAs matrix. A comparison of cross-sectional scanning tunneling microscopy, scanning tunneling spectroscopy, and tight binding calculations of the local density of states reveals that the Mn dopants primarily influence the electronic states at the QD edges and the surrounding GaAs matrix. These results suggest that the Mn dopants reside at the QD edge, consistent with the predictions of a thermodynamic model for the nanoscale-size dependence of dopant incorporation in nanostructures.",
author = "Dasika, {V. D.} and Semichaevsky, {A. V.} and Petropoulos, {J. P.} and Dibbern, {J. C.} and Dangelewicz, {A. M.} and M. Holub and Bhattacharya, {P. K.} and Zide, {J. M.O.} and Johnson, {H. T.} and Goldman, {R. S.}",
note = "Funding Information: We gratefully acknowledge partial support of the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Grant No. DE-FG02-06EF46339. A.V.S., J.C.D., and A.M.D. were supported in part by the National Science Foundation through Grant No. CBET 09-33348. V.D.D. and R.S.G. were supported in part by the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. DE-SC0000957. J.P.P. and J.M.O.Z. were supported in part by the Office of Naval Research under Award No. N00014-09-1-0747.",
year = "2011",
month = apr,
day = "4",
doi = "10.1063/1.3567510",
language = "English (US)",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "14",
}