Influence of Mn dopants on InAs/GaAs quantum dot electronic states

V. D. Dasika, A. V. Semichaevsky, J. P. Petropoulos, J. C. Dibbern, A. M. Dangelewicz, M. Holub, P. K. Bhattacharya, J. M.O. Zide, H. T. Johnson, R. S. Goldman

Research output: Contribution to journalArticle

Abstract

We have investigated the influence of Mn dopants on the electronic states in the vicinity of InAs/GaAs quantum dots (QDs) and the surrounding GaAs matrix. A comparison of cross-sectional scanning tunneling microscopy, scanning tunneling spectroscopy, and tight binding calculations of the local density of states reveals that the Mn dopants primarily influence the electronic states at the QD edges and the surrounding GaAs matrix. These results suggest that the Mn dopants reside at the QD edge, consistent with the predictions of a thermodynamic model for the nanoscale-size dependence of dopant incorporation in nanostructures.

Original languageEnglish (US)
Article number141907
JournalApplied Physics Letters
Volume98
Issue number14
DOIs
StatePublished - Apr 4 2011

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quantum dots
electronics
matrices
scanning tunneling microscopy
thermodynamics
scanning
predictions
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Dasika, V. D., Semichaevsky, A. V., Petropoulos, J. P., Dibbern, J. C., Dangelewicz, A. M., Holub, M., ... Goldman, R. S. (2011). Influence of Mn dopants on InAs/GaAs quantum dot electronic states. Applied Physics Letters, 98(14), [141907]. https://doi.org/10.1063/1.3567510

Influence of Mn dopants on InAs/GaAs quantum dot electronic states. / Dasika, V. D.; Semichaevsky, A. V.; Petropoulos, J. P.; Dibbern, J. C.; Dangelewicz, A. M.; Holub, M.; Bhattacharya, P. K.; Zide, J. M.O.; Johnson, H. T.; Goldman, R. S.

In: Applied Physics Letters, Vol. 98, No. 14, 141907, 04.04.2011.

Research output: Contribution to journalArticle

Dasika, VD, Semichaevsky, AV, Petropoulos, JP, Dibbern, JC, Dangelewicz, AM, Holub, M, Bhattacharya, PK, Zide, JMO, Johnson, HT & Goldman, RS 2011, 'Influence of Mn dopants on InAs/GaAs quantum dot electronic states', Applied Physics Letters, vol. 98, no. 14, 141907. https://doi.org/10.1063/1.3567510
Dasika VD, Semichaevsky AV, Petropoulos JP, Dibbern JC, Dangelewicz AM, Holub M et al. Influence of Mn dopants on InAs/GaAs quantum dot electronic states. Applied Physics Letters. 2011 Apr 4;98(14). 141907. https://doi.org/10.1063/1.3567510
Dasika, V. D. ; Semichaevsky, A. V. ; Petropoulos, J. P. ; Dibbern, J. C. ; Dangelewicz, A. M. ; Holub, M. ; Bhattacharya, P. K. ; Zide, J. M.O. ; Johnson, H. T. ; Goldman, R. S. / Influence of Mn dopants on InAs/GaAs quantum dot electronic states. In: Applied Physics Letters. 2011 ; Vol. 98, No. 14.
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