Influence of Mn dopants on InAs/GaAs quantum dot electronic states

V. D. Dasika, A. V. Semichaevsky, J. P. Petropoulos, J. C. Dibbern, A. M. Dangelewicz, M. Holub, P. K. Bhattacharya, J. M.O. Zide, H. T. Johnson, R. S. Goldman

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Abstract

We have investigated the influence of Mn dopants on the electronic states in the vicinity of InAs/GaAs quantum dots (QDs) and the surrounding GaAs matrix. A comparison of cross-sectional scanning tunneling microscopy, scanning tunneling spectroscopy, and tight binding calculations of the local density of states reveals that the Mn dopants primarily influence the electronic states at the QD edges and the surrounding GaAs matrix. These results suggest that the Mn dopants reside at the QD edge, consistent with the predictions of a thermodynamic model for the nanoscale-size dependence of dopant incorporation in nanostructures.

Original languageEnglish (US)
Article number141907
JournalApplied Physics Letters
Volume98
Issue number14
DOIs
StatePublished - Apr 4 2011

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dasika, V. D., Semichaevsky, A. V., Petropoulos, J. P., Dibbern, J. C., Dangelewicz, A. M., Holub, M., Bhattacharya, P. K., Zide, J. M. O., Johnson, H. T., & Goldman, R. S. (2011). Influence of Mn dopants on InAs/GaAs quantum dot electronic states. Applied Physics Letters, 98(14), [141907]. https://doi.org/10.1063/1.3567510