Influence of ion implantation on the reflectance spectrum of HgCdTe

Li Xiangyang, Zhao Jianhua, Zhu Wenjuan, Jiang Runqing, Xia Yueyuan, Hu Xiaoning, Zhao Jun, Lu Huiqing, Hu Xinwen, Fang Jiaxiong

Research output: Contribution to journalConference articlepeer-review


An obvious minimum was observed in the reflectance spectrum of ion implanted Hg1-xCdxTe. The anodic oxidation method and beveling technique were used to learn the spectrum changing with the depth. This minimum even can be observed when a layer with thickness thicker than the ion range was removed from the implanted surface. Considering the high electron concentration of the implanted layer, this phenomenon was explained by using the model of reflection of layered media in which the refractive index changes with the depth. By numerical fitting, the depth profile of the carrier density and refractive the index of the ion implanted layer were obtained.

Original languageEnglish (US)
Pages (from-to)284-288
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 Conference on Infrared Spaceborne Remote Sensing VI - San Diego, CA, USA
Duration: Jul 22 1998Jul 24 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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