Abstract
An obvious minimum was observed in the reflectance spectrum of ion implanted Hg1-xCdxTe. The anodic oxidation method and beveling technique were used to learn the spectrum changing with the depth. This minimum even can be observed when a layer with thickness thicker than the ion range was removed from the implanted surface. Considering the high electron concentration of the implanted layer, this phenomenon was explained by using the model of reflection of layered media in which the refractive index changes with the depth. By numerical fitting, the depth profile of the carrier density and refractive the index of the ion implanted layer were obtained.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 284-288 |
| Number of pages | 5 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3437 |
| State | Published - 1998 |
| Externally published | Yes |
| Event | Proceedings of the 1998 Conference on Infrared Spaceborne Remote Sensing VI - San Diego, CA, USA Duration: Jul 22 1998 → Jul 24 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering