Influence of ion implantation on the reflectance spectrum of HgCdTe

Li Xiangyang; Zhao Jianhua; Zhu Wenjuan; Jiang Runqing; Xia Yueyuan; Hu Xiaoning; Zhao Jun; Lu Huiqing; Hu Xinwen; Fang Jiaxiong

Influence of ion implantation on the reflectance spectrum of HgCdTe

Li Xiangyang, Zhao Jianhua, Zhu Wenjuan, Jiang Runqing, Xia Yueyuan, Hu Xiaoning, Zhao Jun, Lu Huiqing, Hu Xinwen, Fang Jiaxiong

Research output: Contribution to journal › Conference article › peer-review

Abstract

An obvious minimum was observed in the reflectance spectrum of ion implanted Hg_1-xCd_xTe. The anodic oxidation method and beveling technique were used to learn the spectrum changing with the depth. This minimum even can be observed when a layer with thickness thicker than the ion range was removed from the implanted surface. Considering the high electron concentration of the implanted layer, this phenomenon was explained by using the model of reflection of layered media in which the refractive index changes with the depth. By numerical fitting, the depth profile of the carrier density and refractive the index of the ion implanted layer were obtained.

Original language	English (US)
Pages (from-to)	284-288
Number of pages	5
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3437
State	Published - Dec 1 1998
Externally published	Yes
Event	Proceedings of the 1998 Conference on Infrared Spaceborne Remote Sensing VI - San Diego, CA, USA Duration: Jul 22 1998 → Jul 24 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Influence of ion implantation on the reflectance spectrum of HgCdTe. / Xiangyang, Li; Jianhua, Zhao; Wenjuan, Zhu; Runqing, Jiang; Yueyuan, Xia; Xiaoning, Hu; Jun, Zhao; Huiqing, Lu; Xinwen, Hu; Jiaxiong, Fang.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3437, 01.12.1998, p. 284-288.

Research output: Contribution to journal › Conference article › peer-review

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title = "Influence of ion implantation on the reflectance spectrum of HgCdTe",

abstract = "An obvious minimum was observed in the reflectance spectrum of ion implanted Hg1-xCdxTe. The anodic oxidation method and beveling technique were used to learn the spectrum changing with the depth. This minimum even can be observed when a layer with thickness thicker than the ion range was removed from the implanted surface. Considering the high electron concentration of the implanted layer, this phenomenon was explained by using the model of reflection of layered media in which the refractive index changes with the depth. By numerical fitting, the depth profile of the carrier density and refractive the index of the ion implanted layer were obtained.",

author = "Li Xiangyang and Zhao Jianhua and Zhu Wenjuan and Jiang Runqing and Xia Yueyuan and Hu Xiaoning and Zhao Jun and Lu Huiqing and Hu Xinwen and Fang Jiaxiong",

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journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Proceedings of the 1998 Conference on Infrared Spaceborne Remote Sensing VI ; Conference date: 22-07-1998 Through 24-07-1998",

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T1 - Influence of ion implantation on the reflectance spectrum of HgCdTe

AU - Xiangyang, Li

AU - Jianhua, Zhao

AU - Wenjuan, Zhu

AU - Runqing, Jiang

AU - Yueyuan, Xia

AU - Xiaoning, Hu

AU - Jun, Zhao

AU - Huiqing, Lu

AU - Xinwen, Hu

AU - Jiaxiong, Fang

PY - 1998/12/1

Y1 - 1998/12/1

N2 - An obvious minimum was observed in the reflectance spectrum of ion implanted Hg1-xCdxTe. The anodic oxidation method and beveling technique were used to learn the spectrum changing with the depth. This minimum even can be observed when a layer with thickness thicker than the ion range was removed from the implanted surface. Considering the high electron concentration of the implanted layer, this phenomenon was explained by using the model of reflection of layered media in which the refractive index changes with the depth. By numerical fitting, the depth profile of the carrier density and refractive the index of the ion implanted layer were obtained.

AB - An obvious minimum was observed in the reflectance spectrum of ion implanted Hg1-xCdxTe. The anodic oxidation method and beveling technique were used to learn the spectrum changing with the depth. This minimum even can be observed when a layer with thickness thicker than the ion range was removed from the implanted surface. Considering the high electron concentration of the implanted layer, this phenomenon was explained by using the model of reflection of layered media in which the refractive index changes with the depth. By numerical fitting, the depth profile of the carrier density and refractive the index of the ion implanted layer were obtained.

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JO - Proceedings of SPIE - The International Society for Optical Engineering

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T2 - Proceedings of the 1998 Conference on Infrared Spaceborne Remote Sensing VI

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