Influence of interface thermal conductance on the apparent thermal conductivity of thin films

S. M. Lee, David G. Cahill

Research output: Contribution to journalArticlepeer-review

Abstract

The thermal conductance of 8-to 200-nm-thick films of SiO2 and MgO is measured in the temperature range 78-400 K using the 3ω method. The apparent thermal conductivity of the films is reduced by the finite thermal conductance of the interfaces between the metal film heater and the dielectric layer, and between the dielectric layer and the Si substrate. For SiO2 films at 250 K, the conductance of the two interfaces added in series is G1 = 6 × 103 W/cm2 K, equivalent to the thermal conductance of a 20-nm-thick film of SiO2. For MgO films, G1 is significantly smaller, G1 ≈ 2.5 × 103 W/cm2 K.

Original languageEnglish (US)
Pages (from-to)47-52
Number of pages6
JournalMicroscale Thermophysical Engineering
Volume1
Issue number1
DOIs
StatePublished - Jan 1 1997

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science (miscellaneous)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Physics and Astronomy (miscellaneous)

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