Abstract
The thermal conductance of 8-to 200-nm-thick films of SiO2 and MgO is measured in the temperature range 78-400 K using the 3ω method. The apparent thermal conductivity of the films is reduced by the finite thermal conductance of the interfaces between the metal film heater and the dielectric layer, and between the dielectric layer and the Si substrate. For SiO2 films at 250 K, the conductance of the two interfaces added in series is G1 = 6 × 103 W/cm2 K, equivalent to the thermal conductance of a 20-nm-thick film of SiO2. For MgO films, G1 is significantly smaller, G1 ≈ 2.5 × 103 W/cm2 K.
Original language | English (US) |
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Pages (from-to) | 47-52 |
Number of pages | 6 |
Journal | Microscale Thermophysical Engineering |
Volume | 1 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 1997 |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Materials Science (miscellaneous)
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Physics and Astronomy (miscellaneous)