Influence of interface phonons on intersubband scattering in asymmetric coupled quantum wells

J. L. Educato, J. P. Leburton, P. Boucaud, P. Vagos, F. H. Julien

Research output: Contribution to journalArticlepeer-review

Abstract

A theoretical investigation of intersubband transitions in asymmetric coupled GaAs-AlxGa1-xAs quantum wells is presented in order to understand the role of interface phonons on intersubband scattering times estimated from photoluminescence up-conversion. Photoexcited carrier behavior is analyzed in relation to recent measurements and shows time constants for electron relaxation in agreement with experimental data. We show that interface modes are vital to intersubband relaxation in these structures.

Original languageEnglish (US)
Pages (from-to)12949-12952
Number of pages4
JournalPhysical Review B
Volume47
Issue number19
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Condensed Matter Physics

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