Influence of electron-electron scattering on the hot electron distribution in ultra-short Si-MOSFETs

J. Jakumeit, U. Ravaioli

Research output: Contribution to journalArticlepeer-review

Abstract

The influence of electron-electron scattering on the hot electron distribution in Si-MOSFETs with channel length down to 25 nm is investigated using the local iterative Monte Carlo (LIMO) technique. The LIMO approach simplifies the calculation of electron-electron scattering since the electron distribution is accessible throughout the simulation. An excellent agreement with available experimental findings could be achieved. Our results indicate that the heating of electrons becomes less pronounced for channel length below 50 nm due to a more ballistic electron transport through the channel.

Original languageEnglish (US)
Pages (from-to)363-366
Number of pages4
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 1 2002

Keywords

  • Electron-electron scattering
  • Monte Carlo
  • Si-MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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