Influence of electron doping on the ground state of (Sr1-xLax)2IrO4

Xiang Chen, Tom Hogan, D. Walkup, Wenwen Zhou, M. Pokharel, Mengliang Yao, Wei Tian, Thomas Z. Ward, Y. Zhao, D. Parshall, C. Opeil, J. W. Lynn, Vidya Madhavan, Stephen D. Wilson

Research output: Contribution to journalArticlepeer-review


The evolution of the electronic properties of electron-doped (Sr1-xLax)2IrO4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground-state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x=0.02 and charge transport remains percolative up to the limit of La substitution (x≈0.06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent state's long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electrons are doped into Sr2IrO4, we observe the appearance of a low-temperature magnetic glasslike state intermediate to the complete suppression of antiferromagnetic order. Universalities and differences in the electron-doped phase diagrams of single-layer and bilayer Ruddlesden-Popper strontium iridates are discussed.

Original languageEnglish (US)
Article number075125
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number7
StatePublished - Aug 17 2015

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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