Infinite-layer (Ca1-xSrxCuO2) film growth by molecular beam epitaxy and effect of hole doping

Seongshik Oh, J. N. Eckstein

Research output: Contribution to journalArticlepeer-review

Abstract

We have grown infinite-layer (Ca1-xSrxCuO 2) epitaxial films using ozone assisted molecular beam epitaxy. In situ reflective high energy electron diffraction analysis shows that two-dimensional defect-free films can be obtained for limited composition (0.15<x<0.8) with low temperature seed layer growth scheme. We have also studied various hole doping (oxygenation, vacancy, and Na substitution for Ca) effects on the resistivity of the films. Although we have observed substantial drops in the film resistivity for all three doping schemes, superconductivity is not observed for any of them.

Original languageEnglish (US)
Pages (from-to)301-305
Number of pages5
JournalThin Solid Films
Volume483
Issue number1-2
DOIs
StatePublished - Jul 1 2005

Keywords

  • Doping
  • Infinite-layer
  • MBE
  • RHEED

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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