Inelastic electron tunnelling spectroscopy (IETS) of high-k dielectrics

T. P. Ma, Wei He, Miaomiao Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It is shown that inelastic electron tunnelling spectroscopy (IETS) is a powerful technique to study microstructures and defects in Metal-Insulator- Semiconductor (MIS) systems where the insulator is sufficiently thin to allow significant tunnelling current to flow through. The information that may be revealed by IETS contains a wide variety of inelastic interactions, including interactions with phonons, various bonding vibrations, bonding defects, and impurities. Examples will be given to illustrate the capabilities of this technique.

Original languageEnglish (US)
Title of host publicationCHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference
Pages73-78
Number of pages6
DOIs
StatePublished - Sep 9 2005
Externally publishedYes
Event2005 International Conference on Characterization and Metrology for ULSI Technology - Richardson, TX, United States
Duration: Mar 15 2005Mar 18 2005

Publication series

NameAIP Conference Proceedings
Volume788
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference2005 International Conference on Characterization and Metrology for ULSI Technology
CountryUnited States
CityRichardson, TX
Period3/15/053/18/05

Keywords

  • Electron tunneling
  • High-k dielectrics
  • Phonons
  • Spectroscopy
  • Traps
  • Vibrational modes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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