The inelastic electron tunneling spectroscopy (IETS) study of ultrathin HfO2 and HfAlO was presented. To obtain reference spectra for the study, samples with a thermal SiO2 layer were used. The results showed that the bias polarity dependence of IETS has enabled differentiation of microstructures either near the gate electrode interface or near the silicon substrate interface.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Sep 29 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)