Inelastic electron tunneling spectroscopy study of ultrathin HfO 2 and HfAlO

Wei He; T. P. Ma

doi:10.1063/1.1614837

Inelastic electron tunneling spectroscopy study of ultrathin HfO ₂ and HfAlO

Wei He, T. P. Ma

Research output: Contribution to journal › Article › peer-review

Abstract

The inelastic electron tunneling spectroscopy (IETS) study of ultrathin HfO₂ and HfAlO was presented. To obtain reference spectra for the study, samples with a thermal SiO₂ layer were used. The results showed that the bias polarity dependence of IETS has enabled differentiation of microstructures either near the gate electrode interface or near the silicon substrate interface.

Original language	English (US)
Pages (from-to)	2605-2607
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	13
DOIs	https://doi.org/10.1063/1.1614837
State	Published - Sep 29 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.1614837

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Cite this

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title = "Inelastic electron tunneling spectroscopy study of ultrathin HfO 2 and HfAlO",

abstract = "The inelastic electron tunneling spectroscopy (IETS) study of ultrathin HfO2 and HfAlO was presented. To obtain reference spectra for the study, samples with a thermal SiO2 layer were used. The results showed that the bias polarity dependence of IETS has enabled differentiation of microstructures either near the gate electrode interface or near the silicon substrate interface.",

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N2 - The inelastic electron tunneling spectroscopy (IETS) study of ultrathin HfO2 and HfAlO was presented. To obtain reference spectra for the study, samples with a thermal SiO2 layer were used. The results showed that the bias polarity dependence of IETS has enabled differentiation of microstructures either near the gate electrode interface or near the silicon substrate interface.

AB - The inelastic electron tunneling spectroscopy (IETS) study of ultrathin HfO2 and HfAlO was presented. To obtain reference spectra for the study, samples with a thermal SiO2 layer were used. The results showed that the bias polarity dependence of IETS has enabled differentiation of microstructures either near the gate electrode interface or near the silicon substrate interface.

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