Inelastic electron tunneling spectroscopy study of ultrathin HfO 2 and HfAlO

Wei He, T. P. Ma

Research output: Contribution to journalArticlepeer-review

Abstract

The inelastic electron tunneling spectroscopy (IETS) study of ultrathin HfO2 and HfAlO was presented. To obtain reference spectra for the study, samples with a thermal SiO2 layer were used. The results showed that the bias polarity dependence of IETS has enabled differentiation of microstructures either near the gate electrode interface or near the silicon substrate interface.

Original languageEnglish (US)
Pages (from-to)2605-2607
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number13
DOIs
StatePublished - Sep 29 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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