Inductively coupled plasma reactive ion etching of ZrO2:H solid electrolyte film in BCl3-based plasmas

Han Ki Kim; J. W. Bae; I. Adesida; T. Kim; Tae Yeon Seong; Joo Sun Kim; Y. S. Yoon

doi:10.1149/1.1885285

Inductively coupled plasma reactive ion etching of ZrO₂:H solid electrolyte film in BCl₃-based plasmas

Han Ki Kim, J. W. Bae, I. Adesida, T. Kim, Tae Yeon Seong, Joo Sun Kim, Y. S. Yoon

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Abstract

Inductively coupled plasma reactive ion etching (ICP-RIE) of ZrO ₂:H solid electrolyte films was investigated using BCl ₃-based plasma. ZrO₂:H etch rates were studied as a function of the BCl₃/Ar chemistry, ICP coil power, bias voltage, and working pressure. Scanning electron microscopy and atomic force microscopy were employed to characterize the etch rate and root-mean-square surface roughness of etched samples. It was found that in comparison with Cl₂-based gas mixtures, pure BCl₃ plasma results in a high etch rate of ZrO ₂:H layer, suggesting an abundance of B and BCl radicals made up of a volatile compound such as B_xO_y, BCl-O, and Zr-Cl bond. In addition, Auger electron spectroscopy analysis exhibits that the BCl ₃-based etching process produces no change in surface stoichiometry of the ZrO₂:H films.

Original language	English (US)
Pages (from-to)	A922-A926
Journal	Journal of the Electrochemical Society
Volume	152
Issue number	5
DOIs	https://doi.org/10.1149/1.1885285
State	Published - Jun 20 2005

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

Online availability

10.1149/1.1885285

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title = "Inductively coupled plasma reactive ion etching of ZrO2:H solid electrolyte film in BCl3-based plasmas",

abstract = "Inductively coupled plasma reactive ion etching (ICP-RIE) of ZrO 2:H solid electrolyte films was investigated using BCl 3-based plasma. ZrO2:H etch rates were studied as a function of the BCl3/Ar chemistry, ICP coil power, bias voltage, and working pressure. Scanning electron microscopy and atomic force microscopy were employed to characterize the etch rate and root-mean-square surface roughness of etched samples. It was found that in comparison with Cl2-based gas mixtures, pure BCl3 plasma results in a high etch rate of ZrO 2:H layer, suggesting an abundance of B and BCl radicals made up of a volatile compound such as BxOy, BCl-O, and Zr-Cl bond. In addition, Auger electron spectroscopy analysis exhibits that the BCl 3-based etching process produces no change in surface stoichiometry of the ZrO2:H films.",

author = "Kim, {Han Ki} and Bae, {J. W.} and I. Adesida and T. Kim and Seong, {Tae Yeon} and Kim, {Joo Sun} and Yoon, {Y. S.}",

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T1 - Inductively coupled plasma reactive ion etching of ZrO2:H solid electrolyte film in BCl3-based plasmas

AU - Kim, Han Ki

AU - Bae, J. W.

AU - Adesida, I.

AU - Kim, T.

AU - Seong, Tae Yeon

AU - Kim, Joo Sun

AU - Yoon, Y. S.

PY - 2005/6/20

Y1 - 2005/6/20

N2 - Inductively coupled plasma reactive ion etching (ICP-RIE) of ZrO 2:H solid electrolyte films was investigated using BCl 3-based plasma. ZrO2:H etch rates were studied as a function of the BCl3/Ar chemistry, ICP coil power, bias voltage, and working pressure. Scanning electron microscopy and atomic force microscopy were employed to characterize the etch rate and root-mean-square surface roughness of etched samples. It was found that in comparison with Cl2-based gas mixtures, pure BCl3 plasma results in a high etch rate of ZrO 2:H layer, suggesting an abundance of B and BCl radicals made up of a volatile compound such as BxOy, BCl-O, and Zr-Cl bond. In addition, Auger electron spectroscopy analysis exhibits that the BCl 3-based etching process produces no change in surface stoichiometry of the ZrO2:H films.

AB - Inductively coupled plasma reactive ion etching (ICP-RIE) of ZrO 2:H solid electrolyte films was investigated using BCl 3-based plasma. ZrO2:H etch rates were studied as a function of the BCl3/Ar chemistry, ICP coil power, bias voltage, and working pressure. Scanning electron microscopy and atomic force microscopy were employed to characterize the etch rate and root-mean-square surface roughness of etched samples. It was found that in comparison with Cl2-based gas mixtures, pure BCl3 plasma results in a high etch rate of ZrO 2:H layer, suggesting an abundance of B and BCl radicals made up of a volatile compound such as BxOy, BCl-O, and Zr-Cl bond. In addition, Auger electron spectroscopy analysis exhibits that the BCl 3-based etching process produces no change in surface stoichiometry of the ZrO2:H films.

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