Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs

Engineering & Materials Science

• Two dimensional electron gas 98%
• Inductively coupled plasma 83%
• High electron mobility transistors 65%
• Bias voltage 46%
• Plasmas 34%
• Ion bombardment 29%
• Rapid thermal annealing 28%
• Carrier concentration 26%

Chemical Compounds

• Two-Dimensional Electron Gas 100%
• Rapid Thermal Annealing 41%
• Ion Bombardment 36%
• Electron Mobility 33%
• Inductively Coupled Plasma 28%
• Etching 25%
• Compound Mobility 21%

Physics & Astronomy

• high electron mobility transistors 58%
• damage 40%
• electron gas 35%
• electric potential 20%
• bombardment 17%
• etching 14%
• annealing 11%
• ions 8%