Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs

F. A. Khan; V. Kumar; Ilesanmi Adesida

doi:10.1149/1.1430363

Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs

F. A. Khan, V. Kumar, Ilesanmi Adesida

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Abstract

The effect of damage induced by Ar⁺ ion bombardment on two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) structure at different bias voltages using an inductively coupled plasma system was studied. The samples were measured before and after etching with respect to mobility and sheet carrier concentration. The value of the bias voltage significantly affected the plasma-induced damage on two-dimensional electron gas properties. However, plasma-induced damage could be easily annealed out by rapid thermal annealing the samples for just 5 s at 500°C.

Original language	English (US)
Journal	Electrochemical and Solid-State Letters
Volume	5
Issue number	2
DOIs	https://doi.org/10.1149/1.1430363
State	Published - Feb 2002

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1430363

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N2 - The effect of damage induced by Ar+ ion bombardment on two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) structure at different bias voltages using an inductively coupled plasma system was studied. The samples were measured before and after etching with respect to mobility and sheet carrier concentration. The value of the bias voltage significantly affected the plasma-induced damage on two-dimensional electron gas properties. However, plasma-induced damage could be easily annealed out by rapid thermal annealing the samples for just 5 s at 500°C.

AB - The effect of damage induced by Ar+ ion bombardment on two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) structure at different bias voltages using an inductively coupled plasma system was studied. The samples were measured before and after etching with respect to mobility and sheet carrier concentration. The value of the bias voltage significantly affected the plasma-induced damage on two-dimensional electron gas properties. However, plasma-induced damage could be easily annealed out by rapid thermal annealing the samples for just 5 s at 500°C.

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Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs

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