Inductively coupled plasma dry etching process development for > 50 Gb/s 850 nm oxide-confined VCSELs

Michael Liu, Curtis Y. Wang, Milton Feng

Research output: Contribution to conferencePaper

Abstract

We develop the ICP dry etching process for our high speed 850 nm oxide-confined VCSELs. The ICP etching provides the capability of low pressure etching for high etching rate and better etching profile. There are 3 pairs of Al0.9Ga0.1As/Al0.12Ga0.88As below the active region, and the rest of the n-type bottom DBR is made of AlAs/Al0.12Ga0.88As. Because of the fast oxidation of the AlAs layers, the ICP etching needs to ensure those layers are not exposed. However, the Al0.98Ga0.02As layers on the DBR mesa need to be exposed properly for a uniform oxidation. The fabricated VCSEL shows a high modulation bandwidth of 29.15 GHz and demonstrates error-free (BER < 10-12) transmission at 57 Gb/s data rate.

Original languageEnglish (US)
Pages101-104
Number of pages4
StatePublished - Jan 1 2016
Event31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016 - Miami, United States
Duration: May 16 2016May 19 2016

Other

Other31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016
CountryUnited States
CityMiami
Period5/16/165/19/16

Keywords

  • Inductively Coupled Plasma (ICP) etching
  • Vertical Cavity Surface-Emitting Laser (VCSEL)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Liu, M., Wang, C. Y., & Feng, M. (2016). Inductively coupled plasma dry etching process development for > 50 Gb/s 850 nm oxide-confined VCSELs. 101-104. Paper presented at 31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016, Miami, United States.