Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction

J. Knall, J. E. Sundgren, J. E. Greene, A. Rockett, S. A. Barnett

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Abstract

The incorporation probability sigma //I//n for indium in (100) Si grown by molecular beam epitaxy was found, using secondary ion mass spectrometry (SIMS), to decrease from essentially unity at film growth temperatures T//s of approx. 500 degree C to less than 10** minus **4 at 840 degree C. SIMS depth profiles of both uniformly doped and modulation-doped samples showed evidence of strong surface segregation with the amount of profile broadening directly related to sigma //I//n (T//s). A combination of in situ electron diffraction and Auger electron spectroscopy was used to show that the surface segregation rate was sufficient over a wide range in T//s and In to Si flux ratios to cause the initial (2 multiplied by 1)-(100) Si surface reconstruction to transform to (3 multiplied by 4) due to the formation of an ordered In surface layer. The In surface coverage in the (3 multiplied by 4) states was approx. 0. 05-0. 1 monolayer even though the bulk In concentration was less than equivalent to 2 multiplied by 10**1**7 cm**3. The (2 multiplied by 1) to (3 multiplied by 4) surface phase transition was reversible by either terminating film growth and reevaporating the excess surface

Original languageEnglish (US)
Pages (from-to)689-691
Number of pages3
JournalApplied Physics Letters
Volume45
Issue number6
DOIs
StatePublished - Dec 1 1984

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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