Indirect conversion digital X-ray imager using an amorphous selenium photoconductor

Shiva Abbaszadeh, R. Keshavarzi, K. Wang, K. S. Karim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we report preliminary results from a 32×32 pixel prototype array that integrates a-Si:H TFT pixels with optically sensitive lateral a-Se MSM detectors. The array was in-house fabricated and characterized. Recent advances in improving the wavelength sensitivity, dark current, photocurrent and quantum efficiency of the a-Se optically sensitive lateral device are also presented together with system-level characterization and the first image captured by the array.

Original languageEnglish (US)
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
Pages271-279
Number of pages9
Edition1
DOIs
StatePublished - Oct 21 2013
Externally publishedYes
Event5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada
Duration: May 12 2013May 17 2013

Publication series

NameECS Transactions
Number1
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period5/12/135/17/13

ASJC Scopus subject areas

  • Engineering(all)

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