@inproceedings{07f955aa3c9140d9bf11f2b35a896cfe,
title = "Indirect conversion digital X-ray imager using an amorphous selenium photoconductor",
abstract = "In this work, we report preliminary results from a 32×32 pixel prototype array that integrates a-Si:H TFT pixels with optically sensitive lateral a-Se MSM detectors. The array was in-house fabricated and characterized. Recent advances in improving the wavelength sensitivity, dark current, photocurrent and quantum efficiency of the a-Se optically sensitive lateral device are also presented together with system-level characterization and the first image captured by the array.",
author = "S. Abbaszadeh and R. Keshavarzi and K. Wang and Karim, {K. S.}",
year = "2013",
doi = "10.1149/05301.0271ecst",
language = "English (US)",
isbn = "9781607683742",
series = "ECS Transactions",
number = "1",
pages = "271--279",
booktitle = "Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5",
edition = "1",
note = "5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting ; Conference date: 12-05-2013 Through 17-05-2013",
}