Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantation

J. J. Alwan; J. Honig; M. E. Favaro; K. J. Beernink; J. L. Klatt; R. S. Averback; J. J. Coleman; R. P. Bryan

doi:10.1063/1.105009

Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantation

J. J. Alwan, J. Honig, M. E. Favaro, K. J. Beernink, J. L. Klatt, R. S. Averback, J. J. Coleman, R. P. Bryan

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Abstract

Stable index-guided operation of variable stripe strained-layer InGaAs-GaAs-AlGaAs lasers achieved by MeV oxygen implantation-induced disorder of the active region is demonstrated. Well-behaved near- and far-field patterns for lasers implanted with 5×10¹⁶ cm^-2 and 1×10¹⁷ cm^-2 oxygen are observed to be stable with increasing drive current. Comparison with unimplanted, oxide-defined stripe lasers fabricated from the same wafer indicates a dramatic improvement in emission characteristics as a result of the presence of a lateral real-index waveguide in the oxygen-disordered regions which is stronger than the carrier-induced antiguide present in unimplanted InGaAs-GaAs strained-layer lasers.

Original language	English (US)
Pages (from-to)	2058-2060
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	19
DOIs	https://doi.org/10.1063/1.105009
State	Published - 1991

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Physics and Astronomy (miscellaneous)

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10.1063/1.105009

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title = "Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantation",

abstract = "Stable index-guided operation of variable stripe strained-layer InGaAs-GaAs-AlGaAs lasers achieved by MeV oxygen implantation-induced disorder of the active region is demonstrated. Well-behaved near- and far-field patterns for lasers implanted with 5×1016 cm-2 and 1×1017 cm-2 oxygen are observed to be stable with increasing drive current. Comparison with unimplanted, oxide-defined stripe lasers fabricated from the same wafer indicates a dramatic improvement in emission characteristics as a result of the presence of a lateral real-index waveguide in the oxygen-disordered regions which is stronger than the carrier-induced antiguide present in unimplanted InGaAs-GaAs strained-layer lasers.",

author = "Alwan, {J. J.} and J. Honig and Favaro, {M. E.} and Beernink, {K. J.} and Klatt, {J. L.} and Averback, {R. S.} and Coleman, {J. J.} and Bryan, {R. P.}",

year = "1991",

doi = "10.1063/1.105009",

language = "English (US)",

volume = "58",

pages = "2058--2060",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantation

AU - Alwan, J. J.

AU - Honig, J.

AU - Favaro, M. E.

AU - Beernink, K. J.

AU - Klatt, J. L.

AU - Averback, R. S.

AU - Coleman, J. J.

AU - Bryan, R. P.

PY - 1991

Y1 - 1991

N2 - Stable index-guided operation of variable stripe strained-layer InGaAs-GaAs-AlGaAs lasers achieved by MeV oxygen implantation-induced disorder of the active region is demonstrated. Well-behaved near- and far-field patterns for lasers implanted with 5×1016 cm-2 and 1×1017 cm-2 oxygen are observed to be stable with increasing drive current. Comparison with unimplanted, oxide-defined stripe lasers fabricated from the same wafer indicates a dramatic improvement in emission characteristics as a result of the presence of a lateral real-index waveguide in the oxygen-disordered regions which is stronger than the carrier-induced antiguide present in unimplanted InGaAs-GaAs strained-layer lasers.

AB - Stable index-guided operation of variable stripe strained-layer InGaAs-GaAs-AlGaAs lasers achieved by MeV oxygen implantation-induced disorder of the active region is demonstrated. Well-behaved near- and far-field patterns for lasers implanted with 5×1016 cm-2 and 1×1017 cm-2 oxygen are observed to be stable with increasing drive current. Comparison with unimplanted, oxide-defined stripe lasers fabricated from the same wafer indicates a dramatic improvement in emission characteristics as a result of the presence of a lateral real-index waveguide in the oxygen-disordered regions which is stronger than the carrier-induced antiguide present in unimplanted InGaAs-GaAs strained-layer lasers.

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Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantation

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