Abstract
The observation of medium-range order (MRO) in amorphous silicon using the low-energy ion bombardment technique was discussed. MRO structure is assumed to be produced during the nonequilibrium deposition process, during which nuclei were formed and buried. The testing of this assumption by altering the deposition kinetics during the magnetron sputter deposition was also discussed.
Original language | English (US) |
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Pages (from-to) | 3665-3667 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 21 |
DOIs | |
State | Published - May 26 2003 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)