Increasing medium-range order in amorphous silicon with low-energy ion bombardment

J. E. Gerbi; P. M. Voyles; M. M.J. Treacy; J. M. Gibson; J. R. Abelson

doi:10.1063/1.1578164

Increasing medium-range order in amorphous silicon with low-energy ion bombardment

J. E. Gerbi, P. M. Voyles, M. M.J. Treacy, J. M. Gibson, J. R. Abelson

Research output: Contribution to journal › Article › peer-review

Abstract

The observation of medium-range order (MRO) in amorphous silicon using the low-energy ion bombardment technique was discussed. MRO structure is assumed to be produced during the nonequilibrium deposition process, during which nuclei were formed and buried. The testing of this assumption by altering the deposition kinetics during the magnetron sputter deposition was also discussed.

Original language	English (US)
Pages (from-to)	3665-3667
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	21
DOIs	https://doi.org/10.1063/1.1578164
State	Published - May 26 2003

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.1578164

Library availability

Discover UIUC Full Text

Cite this

@article{982dc16d03bf49e68d4a07fc786bb525,

title = "Increasing medium-range order in amorphous silicon with low-energy ion bombardment",

abstract = "The observation of medium-range order (MRO) in amorphous silicon using the low-energy ion bombardment technique was discussed. MRO structure is assumed to be produced during the nonequilibrium deposition process, during which nuclei were formed and buried. The testing of this assumption by altering the deposition kinetics during the magnetron sputter deposition was also discussed.",

author = "Gerbi, {J. E.} and Voyles, {P. M.} and Treacy, {M. M.J.} and Gibson, {J. M.} and Abelson, {J. R.}",

year = "2003",

month = may,

day = "26",

doi = "10.1063/1.1578164",

language = "English (US)",

volume = "82",

pages = "3665--3667",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Increasing medium-range order in amorphous silicon with low-energy ion bombardment

AU - Gerbi, J. E.

AU - Voyles, P. M.

AU - Treacy, M. M.J.

AU - Gibson, J. M.

AU - Abelson, J. R.

PY - 2003/5/26

Y1 - 2003/5/26

N2 - The observation of medium-range order (MRO) in amorphous silicon using the low-energy ion bombardment technique was discussed. MRO structure is assumed to be produced during the nonequilibrium deposition process, during which nuclei were formed and buried. The testing of this assumption by altering the deposition kinetics during the magnetron sputter deposition was also discussed.

AB - The observation of medium-range order (MRO) in amorphous silicon using the low-energy ion bombardment technique was discussed. MRO structure is assumed to be produced during the nonequilibrium deposition process, during which nuclei were formed and buried. The testing of this assumption by altering the deposition kinetics during the magnetron sputter deposition was also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0038306948&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038306948&partnerID=8YFLogxK

U2 - 10.1063/1.1578164

DO - 10.1063/1.1578164

M3 - Article

AN - SCOPUS:0038306948

SN - 0003-6951

VL - 82

SP - 3665

EP - 3667

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Increasing medium-range order in amorphous silicon with low-energy ion bombardment

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this