Increased latch-up susceptibility of ICs using reverse body bias

Sandeep Vora, Michael Stockinger, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

― This work presents a previously undocumented cause of latch-up in circuits with reverse body bias capability. This latch-up phenomenon was noticed first during power-on ESD testing. The latch-up risk is determined by the biasing scheme and power delivery network. SPICE simulations are used to confirm the cause and evaluate counter-measures.

Original languageEnglish (US)
Title of host publicationElectrical Overstress/Electrostatic Discharge Symposium 2020, Proceedings - EOS/ESD 2020
PublisherESD Association
ISBN (Electronic)9781728194615
StatePublished - Sep 13 2020
Event42nd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2020 - Reno, United States
Duration: Sep 13 2020Sep 18 2020

Publication series

NameElectrical Overstress/Electrostatic Discharge Symposium Proceedings
Volume2020-September
ISSN (Print)0739-5159

Conference

Conference42nd Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2020
CountryUnited States
CityReno
Period9/13/209/18/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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