Increased Formation of Silicon-Vacancies in Diamond by Sub-Bandgap Light Irradiation during Annealing

Research output: Contribution to journalConference articlepeer-review

Abstract

This study investigates the brightness enhancement of silicon-vacancy (SiV) centers in diamond through UV irradiation during post-implantation annealing. Results show a 15% increase in photoluminescence brightness, attributed to improved SiV formation due to reduced divacancy density, suggesting potential for optimized manufacturing of single defect sites for quantum applications.

Original languageEnglish (US)
Pages (from-to)1208-1209
Number of pages2
JournalInternational Conference on Metamaterials, Photonic Crystals and Plasmonics
StatePublished - 2025
Event15th International Conference on Metamaterials, Photonic Crystals and Plasmonics, META 2025 - Malaga, Spain
Duration: Jul 22 2025Jul 25 2025

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science (miscellaneous)
  • Materials Chemistry
  • Electrical and Electronic Engineering

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